High-frequency switching power semiconductor devices form the backbone of modern power electronic converters. While silicon (Si) technology has long dominated this field, its inherent physical limitations are increasingly constraining the pursuit of higher-performance power conversion. Wide Bandgap (WBG) semiconductors—most notably silicon carbide (SiC) and gallium nitride (GaN)—offer significant advantages, including higher efficiency, reduced size and weight, and extended device lifetimes. Applications in both power grid electronics and electromobility are expanding, but the adoption of WBG devices is currently limited by key technological challenges, foremost among them packaging.
This book provides an in-depth account of the development of advanced multi-chip packaging solutions for next-generation WBG semiconductors, with a particular focus on SiC power MOSFETs.
Coverage includes:
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Fundamentals of multi-chip power modules
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Module design and adaptation for SiC technology
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Electrothermal, thermo-mechanical, statistical, and electromagnetic aspects of optimized module design
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High-temperature SiC power modules
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Validation and degradation monitoring techniques
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Emerging packaging technologies
Bridging materials science, electrical engineering, and applied physics, this reference is an essential resource for researchers and practitioners in both academia and industry working on WBG power device packaging and reliability.
